參數(shù)資料
型號: 2SD669
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial(外延NPN晶體管)
中文描述: npn型硅外延(外延npn型晶體管)
文件頁數(shù): 3/7頁
文件大?。?/td> 40K
代理商: 2SD669
2SD669, 2SD669A
3
Electrical Characteristics
(Ta = 25°C)
2SD669
2SD669A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
180
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
160
V
I
C
= 10 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
10
10
μA
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 150 mA*
DC current transfer
ratio
1
60
320
60
200
2
h
FE2
V
CE(sat)
30
30
V
CE
= 5 V, I
C
= 500 mA*
I
C
= 500 mA,
I
B
= 50 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
= 10 V, I
E
= 0,
f = 1 MHz
2
Collector to emitter
saturation voltage
1
1
V
2
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Notes: 1. The 2SD669 and 2SD669A are grouped by h
FE1
as follows.
2. Pulse test.
1.5
1.5
V
2
140
140
MHz
2
Cob
14
14
pF
B
C
D
2SD669
60 to 120
100 to 200
160 to 320
2SD669A
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)
2SD717 Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)
2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications
2SB698 1W AF Output, Electronic Governor, DC-DC Converter Applications
2SD755 Silicon NPN Epitaxial
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD669_10 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669_12 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD669AB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126
2SD669A-B-AA3-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR