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參數(shù)資料
| 型號： | 2SD668D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SD668D |
2SD668, 2SD668A
2
Electrical Characteristics (Ta = 25°C)
2SD668
2SD668A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
180
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
160
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
——10
A
V
CB = 160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
—
320
60
—
200
V
CE = 5 V, IC = 10 mA
h
FE2
30
—
30
—
V
CE = 5 V, IC = 1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——
2
——2
V
I
C = 30 mA, IB = 3 mA
Base to emitter voltage V
BE
—
1.5
—
1.5
V
CE = 5 V, IC = 10 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = 10 V, IC = 10 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD668 and 2SD668A are grouped by h
FE1 as follows.
BCD
2SD668
60 to 120
100 to 200
160 to 320
2SD668A
60 to 120
100 to 200
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD669A-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669A-C-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-C-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-D-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD718R | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD669 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD669_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD669AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
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