
2SB633P/2SD613P
No.6662-1/4
Features
High breakdown voltage, VCEO 85V,
high current 6A.
AF 35 to 45W output.
Specifications
( ) : 2SB633P
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
)100
V
Collector-to-Emitter Voltage
VCEO
(
)85
V
Emitter-to-Base Voltage
VEBO
(
)6
V
Collector Current
IC
(
)6
A
Collector Current (Pulse)
ICP
(
)10
A
Collector Dissipation
PC
Tc=25
°C60
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6662
Package Dimensions
unit : mm
2010C
[2SB633P / 2SD613P]
13001 TS IM TA-3082
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.7
12
3
PNP / NPN Epitaxial Planar Silicon Transistors
2SB633P / 2SD613P
85V / 6A, AF 35 to 45W Output Applications