參數(shù)資料
型號(hào): 2SD2719
元件分類: 小信號(hào)晶體管
英文描述: 800 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 2-3S1C, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 202K
代理商: 2SD2719
2SD2719
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2719
Solenoid Drive Applications
Motor Drive Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
60
±10
V
Emitter-base voltage
VEBO
8
V
DC
IC
0.8
Collector current
Pulse
ICP
3
A
Base current
IB
0.5
A
DC
0.8
Collector power
dissipation
t
= 10 s
PC (Note)
1.25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm
2)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
1. Base
2. Emitter
3. Collector
Emitter
5 k
Ω
300
Ω
Base
Collector
相關(guān)PDF資料
PDF描述
2SD313G-E-TA3-T 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD313L-C-TF3-T 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD313G-D-TF3-T 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD313G-F-TA3-T 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD313G-C-TF3-T 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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