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參數(shù)資料
| 型號(hào)： | 2SD2716 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, TO-3P, 2-16E3A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 179K |
| 代理商： | 2SD2716 |
2SD2716
2006-11-22
1
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
2SD2716
Horizontal Deflection Output for Color TVs
High voltage
: VCBO = 1500 V
Low saturation voltage
: VCE (sat) = 5 V (max)
High speed
: tf = 0.3 s (Typ.)
Built-in damper type
Collector metal (fin) is fully covered with mold resin.
TO-3P(H)IS package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collectorbase voltage
VCBO
1500
V
Collectoremitter voltage
VCEO
600
V
Emitterbase voltage
VEBO
7
V
DC
IC
6
Collector current
Pulse
ICP
12
A
Base current
IB
3
A
Collector power dissipation
PC
50
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Characteristics
Symbol
Rating
Unit
Thermal resistance , junction to case
(Tc
= 25°C)
Rth (j-c)
2.5
°C/W
1.Base
75
(Typ.)
3.Emitter
2.Collector
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