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參數(shù)資料
| 型號： | 2SD2573 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SD2573 |
Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
1
Publication date: September 2003
SJD00278BED
For high current amplification, power amplification
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 25 mA, I
B
= 0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
I
C
=
2 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
60
V
Collector-base cutoff current (Emitter open)
I
CBO
100
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
100
Emitter-base cutoff current (Collector open)
100
Forward current transfer ratio
*
h
FE
500
2
500
Collector-emitter saturation voltage
V
CE(sat)
f
T
1.0
V
Transition frequency
50
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
80
V
Collector-emitter voltage (Base open)
60
V
Emitter-base voltage (Collector open)
V
EBO
6
V
Collector current
I
C
I
CP
3
A
Peak collector current
6
A
Collector power dissipation T
C
=
25
°
C
P
C
1.5
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
P
Q
R
h
FE
500 to 1
000
800 to 1
500
1
200 to 2
500
7.5
±
0.2
0.65
±
0.1
2
±
0
0.7
±
0.1
1.15
±
0.2
2.5
±
0.2
2.5
±
0.2
0.85
±
0.1
1.0
±
0.1
0.7
±
0.1
1.15
±
0.2
0.5
±
0.1
1
0.8 C
2
3
0.4
±
0.1
4.5
±
0.2
0.8 C
0.8 C
3
±
0
1
±
1
1
±
0
2
±
0
9
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
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