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參數(shù)資料
| 型號(hào)： | 2SD2492 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2SD2492 |
2SD2491, 2SD2492
2
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SD2491
2SD2492
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
Tj
160
200
V
Collector to emitter voltage
160
200
V
Emitter to base voltage
5
5
V
Collector current
100
100
mA
Collector power dissipation
1.35
1.35
W
Collector power dissipation
1
8
8
W
Junction temperature
150
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
2SD2491
2SD2492
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
—
—
200
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
—
—
200
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 10 μA, I
C
= 0
Collector cutoff current
I
CBO
—
—
10
—
—
—
μA
V
CB
= 140 V, I
E
= 0
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
—
—
—
—
—
10
μA
DC current transfer
ratio
h
FE1
*
1
60
—
320
60
—
320
DC current transfer
ratio
h
FE2
30
—
—
30
—
—
V
CE
= 5 V, I
C
= 1 mA
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
—
—
1.5
—
—
1.5
V
V
CE
= 5 V, I
C
= 10 mA
I
C
= 30 mA, I
B
= 3 mA
V
CE(sat)
—
—
2
—
—
2
V
Gain bandwidth product f
T
Collector output
capacitance
Note:
1. The 2SD2491 and 2SD2492 are grouped by h
FE1
and its specification is as follows.
—
140
—
—
140
—
MHz
V
CE
= 5 V, I
C
= 10 mA
V
= 10 V, I
E
= 0
f = 1 MHz
Cob
—
3.8
—
—
3.8
—
pF
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