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      參數(shù)資料
      型號: 2SD2486Q
      廠商: PANASONIC CORP
      元件分類: 功率晶體管
      英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
      封裝: TO-220, FULL PACK-3
      文件頁數(shù): 2/3頁
      文件大?。?/td> 167K
      代理商: 2SD2486Q
      2
      Power Transistors
      2SD2486
      PC —Ta
      IC —VCE
      VCE(sat) —IC
      VBE(sat) —IC
      hFE —IC
      fT —IC
      Cob —VCB
      ton, tstg, tf — IC
      Area of safe operation (ASO)
      0
      160
      40
      120
      80
      140
      20
      100
      60
      0
      30
      25
      20
      15
      10
      5
      (1) T
      C=Ta
      (2) With a 100
      × 100 × 2mm
      Al heat sink
      (3) With a 50
      × 50 × 2mm
      Al heat sink
      (4) Without heat sink
      (P
      C=2W)
      (1)
      (2)
      (3)
      (4)
      Ambient temperature Ta (C)
      Collector
      power
      dissipation
      P
      C
      (W
      )
      012
      10
      8
      26
      4
      0
      3.0
      2.5
      2.0
      1.5
      1.0
      0.5
      I
      B=5.0mA
      0.5mA
      1.0mA
      1.5mA
      2.0mA
      2.5mA
      3.0mA
      4.0mA
      T
      C=25C
      Collector to emitter voltage V
      CE
      (V)
      Collector
      current
      I
      C
      (A
      )
      0.01
      0.1
      1
      10
      0.03
      0.3
      3
      0.01
      0.03
      0.1
      0.3
      1
      3
      10
      30
      100
      I
      C/IB=40
      T
      C=100C
      25C
      –25C
      Collector current I
      C
      (A)
      Collector
      to
      emitter
      saturation
      voltage
      V
      CE(sat)
      (V
      )
      0.01
      0.1
      1
      10
      0.03
      0.3
      3
      0.01
      0.03
      0.1
      0.3
      1
      3
      10
      30
      100
      I
      C/IB=40
      T
      C=–25C
      25C
      100C
      Collector current I
      C
      (A)
      Base
      to
      emitter
      saturation
      voltage
      V
      BE(sat)
      (V
      )
      0.01
      0.1
      1
      10
      0.03
      0.3
      3
      10
      30
      100
      300
      1000
      3000
      10000
      30000
      100000
      V
      CE=2V
      T
      C=100C
      25C
      –25C
      Collector current I
      C
      (A)
      Forward
      current
      transfer
      ratio
      h
      FE
      0.01
      0.1
      1
      10
      0.03
      0.3
      3
      1
      3
      10
      30
      100
      300
      1000
      3000
      10000
      V
      CE=10V
      f=10MHz
      T
      C=25C
      Collector current I
      C
      (A)
      Transition
      frequency
      f
      T
      (MHz
      )
      0.1
      1
      10
      100
      0.3
      3
      30
      1
      3
      10
      30
      100
      300
      1000
      3000
      10000
      I
      E=0
      f=1MHz
      T
      C=25C
      Collector to base voltage V
      CB
      (V)
      Collector
      output
      capacitance
      C
      ob
      (pF
      )
      05
      4
      13
      2
      0.01
      0.03
      0.1
      0.3
      1
      3
      10
      30
      100
      Pulsed t
      w=1ms
      Duty cycle=1%
      I
      C/IB=40 (IB1=–IB2)
      V
      CC=50V
      T
      C=25C
      t
      stg
      t
      f
      t
      on
      Collector current I
      C
      (A)
      Switching
      time
      t
      on
      ,t
      stg
      ,t
      f
      (
      s
      )
      1
      10
      100
      1000
      3
      30
      300
      0.01
      0.03
      0.1
      0.3
      1
      3
      10
      30
      100
      Non repetitive pulse
      T
      C=25C
      I
      CP
      I
      C
      10ms
      t=1ms
      DC
      Collector to emitter voltage V
      CE
      (V)
      Collector
      current
      I
      C
      (A
      )
      Ma
      int
      en
      an
      ce
      /
      Dis
      co
      nti
      nu
      ed
      Please
      visit
      following
      URL
      about
      latest
      information.
      http://panasonic.co.jp/semicon/e-index.html
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