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參數資料
| 型號： | 2SD2463-K |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 103K |
| 代理商： | 2SD2463-K |
1998
Document No. D16158EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2463
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2463 is a Darlington connection transistor with on-
chip dumper diode in collector to emitter and zener diode in
collector to base.
This transistor is ideal for use in acuator
drives such as motors, relays, and solenoids.
FEATURES
Cost reduction available due to on-chip dumper diode (C to
E) and zener diode ( C to B)
Low collector saturation voltage
Insulation type package supportable for radial taping
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
31
±4
V
Collector to emitter voltage
VCEO
31
±4
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
TC = 25
°C
±2.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, Duty cycle ≤ 50%, TC = 25°C
±3.0
A
Base current (DC)
IB(DC)
0.2
A
Total power dissipation
PT
1.0
W
Total power dissipation
PT
TC = 25
°C
6.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC |
| 2SD2470TP | 功能描述:達林頓晶體管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2480(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 110V 6A 30W BCE |
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