參數(shù)資料
型號(hào): 2SD2457G-R
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINIP3-F2, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 170K
代理商: 2SD2457G-R
Transistors
1
Publication date: October 2007
SJD00345AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2457G
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low collector power dissipation P
C
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 1 mA, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 040
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IE = 010
A
Forward current transfer ratio *
1, 2
hFE
VCE = 5 V, IC = 1 A
80
220
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1.0
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency *
1
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
45
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Rank
Q
R
hFE
80 to 160
120 to 220
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Y
相關(guān)PDF資料
PDF描述
2SD2457G-Q 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2457G 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2457GR 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2457Q 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2461 2 A, 60 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD24590RL 功能描述:TRANS NPN 150VCEO 1A MINI PWR RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD24590SL 功能描述:TRANS NPN 150VCEO 1A MINI PWR RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD246 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 4.5A 16W BEC
2SD247 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC
2SD2470TP 功能描述:達(dá)林頓晶體管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel