參數(shù)資料
型號(hào): 2SD2403-GX
元件分類: 功率晶體管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 137K
代理商: 2SD2403-GX
1998
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The
2SD2403
is
a
transistor
featuring
high
current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
5.0
A
Base current (DC)
IB(DC)
0.2
A
Base current (pulse)
IB(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
0.4
A
Total power dissipation
PT
16 cm
2
× 0.7 mm ceramic board mounted
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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