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參數(shù)資料
| 型號： | 2SD2385C |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-264AA |
| 中文描述： | 晶體管|晶體管|達林頓| npn型| 140伏特五（巴西）總裁| 8A條一（c）|至264AA |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SD2385C |
2
Transistor
2SD2321
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
C
C
0
2.4
2.0
1.6
0.4
1.2
0.8
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta=25C
I
B
=7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
=2V
Ta=75C
–25C
25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Ta=75C
25C
–25C
I
C
/I
B
=30
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=30
Ta=–25C
25C
75C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0
600
500
400
300
200
100
Ta=75C
25C
–25C
V
CE
=2V
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Emitter current I
E
(A)
– 0.3
–3
400
300
100
250
350
200
50
150
V
=6V
Ta=25C
T
T
1
3
10
30
100
0
100
80
60
40
20
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
C
C
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