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參數(shù)資料
| 型號(hào)： | 2SD2275 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 中文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3L, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SD2275 |
1
Power Transistors
2SD2275
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1502
I
Features
G
Optimum for 55W HiFi output
G
High foward current transfer ratio h
FE
: 5000 to 30000
G
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
100
5
8
5
60
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 4mA
I
C
= 4A, I
B
= 4mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 4mA, I
B2
= –4mA,
V
CC
= 50V
min
100
2000
5000
typ
20
2.5
3.5
1.0
max
100
100
100
30000
2.5
3.0
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
5000 to 15000 7000 to 21000 8000 to 30000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±
0.5
6
1
2
±
0
2
±
0
1
2
S
10.9
±
0.5
1
2
3
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.0
±
0.3
3.0
4
2
5.45
±
0.3
0.6
±
0.2
1.5
2.7
±
0.3
1.5
2
φ
3.3
±
0.2
3
B
E
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2275P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2276 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SD2276P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
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