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參數(shù)資料
| 型號： | 2SD2260R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 171K |
| 代理商： | 2SD2260R |
1
Transistor
2SD2260
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
s Features
q
High collector breakdown voltage.
q
Low collector to emitter saturation voltage VCE(sat).
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9
±0.1
1.05
±0.05
2.5
±0.1
3.5
±0.1
14.5
±0.5
(1.45)
0.8
0.7
4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1
–0.05
2.5
±0.5 2.5±0.5
2.5
±0.1
123
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
400
5
100
70
600
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
VCE = 100V, IB = 0
IC = 100A, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
400
5
60
50
typ
0.4
80
4
max
2
220
1.2
10
Unit
A
V
MHz
pF
*h
FE Rank classification
Rank
Q
R
hFE
60 ~ 150
100 ~ 220
1.2
±0.1
0.65
max.
0.45 0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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