參數(shù)資料
型號(hào): 2SD2242AP
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: MT4, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 61K
代理商: 2SD2242AP
1
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
s Features
q
High foward current transfer ratio hFE
q
High-speed switching
q
Allowing supply with the radial taping
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
80
60
80
5
8
4
15
2
150
–55 to +150
Unit
V
A
W
C
2SD2242
2SD2242A
2SD2242
2SD2242A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
500
2
10000
2.5
2
4
Unit
A
mA
V
MHz
s
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
*h
FE2 Rank classification
Rank
Q
P
hFE2
2000 to 5000 4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±0.2
0.55
±0.1
2.5
±0.2
2.5
±0.2
4.2
±0.2
13.0
±0.2
2.5
±0.2
18.0
±0.5
Solder
Dip
5.0
±0.1
2.25
±0.2
1.2
±0.1
0.65
±0.1
0.55
±0.1
C1.0
90
°
C1.0
123
1.05
±0.1
0.35
±0.1
B
E
C
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