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| 型號(hào)： | 2SD2227SWTP |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 150毫安一（c）|律師- 72 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SD2227SWTP |
1
Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
For power amplification and switching
I
Features
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
±
15
100
±
15
5
8
4
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*1
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b*2
Conditions
V
CB
= 85V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
I
C
= 3A, I
B
= 12mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
I
C
= 1A, L = 100mH, R
BE
= 100
min
85
1000
1000
typ
20
50
max
100
2
115
10000
2
4
2.5
0.3
3.0
1.0
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
mJ
*1
h
FE2
Rank classification
Rank
Q
P
h
FE2
1000 to 5000
2000 to 10000
T
C
=25
°
C
Ta=25
°
C
L coil
I
C
I
B1
V
in
t
W
–I
B2
Vclamp
V
CC
T.U.T
*2
E
s/b
Test circuit
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2274 | |
| 2SD2275P | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275Q | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2228 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Silicon Epitaxia |
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| 2SD2228D43 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:BJT |
| 2SD2228D44 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:BJT |
| 2SD2228D45 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:BJT |
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