- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30591 > 2SD2225R (PANASONIC CORP) 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD2225R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 234K |
| 代理商： | 2SD2225R |
Transistors
1
Publication date: February 2003
SJC00251BED
2SD2225
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
High collector-emitter voltage (Base open) V
CEO of 120 V
Optimum for low-frequency driver amplification
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 0.1 mA, I
B
= 0
120
V
Emitter-base voltage (Collector open)
VEBO
IC = 10 A, IC = 05
V
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 150 mA
90
330
hFE2
VCE = 5 V, IC = 500 mA
50
hFE3
VCE = 5 V, IC = 100 mA
100
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 300 mA, IB = 30 mA
0.15
1.00
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 300 mA, I
B
= 30 mA
0.9
1.2
V
Transition frequency *
1
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
11.5
20.0
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Rank
Q
R
S
hFE1
90 to 155
130 to 220
185 to 330
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±
0.1
14.5
±
0.5
4.0
0.7
0.65 max.
(0.2)
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2227STPW | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2227STP/V | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2226KT146V | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2707T2LW | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2707T2LV | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2225S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2226K | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor (50V, 0.15A) |
| 2SD2226KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2226KT146V | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2226KT146W | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。