- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33436 > 2SD2216JR (PANASONIC CORP) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2216JR |
| 廠(chǎng)商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 204K |
| 代理商： | 2SD2216JR |
Transistors
1
Publication date: November 2008
SJC00249DED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2216J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462J
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio
hFE1 *
2
VCE = 10 V, IC = 2 mA
160
460
hFE2 *
1
VCE = 2 V, IC = 100 mA
90
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
■ Package
Code
SSMini3-F1
Pin Name
1: Base
2: Emitter
3: Collector
■ Marking Symbol: Y
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No rank
hFE1
160 to 260
210 to 340
290 to 460
180 to 390
Product of no-rank is not classified and have no marking symbol for rank.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2217 | 0.3 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SD2221P | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD2221Q | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD2223 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD2227STP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2216L | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:For General Amplification |
| 2SD2217 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2218 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:General High-Current Switching Applications |
| 2SD2218Q | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。