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參數(shù)資料
| 型號： | 2SD2165 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SD2165 |
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confirm that this is the latest version.
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1998
Document No. D13178EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2165 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
FEATURES
High hFE and low VCE(sat):
hFE
1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT)
0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
6.0
A
Collector current (pulse)
IC(pulse)
10
Note
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (TC = 25
°C)
30
W
Total power dissipation
PT (TA = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2165-AZ | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165-L | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165-M-AZ | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165-L-AZ | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165-M | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2165-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,100V,6.0A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2165AZ-K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SD2165K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR |
| 2SD2165L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR |
| 2SD2165-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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