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參數(shù)資料
| 型號(hào)： | 2SD2164 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管低頻功率放大器和低速開關(guān) |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SD2164 |
Data Sheet D15606EJ3V0DS
2
2SD2164
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0 A
10
μ
A
Emitter cutoff current
I
EBO
V
EB
= 7.0 V, I
C
= 0 A
10
μ
A
DC current gain
h
FE1
V
CE
= 5.0 V, I
C
= 0.5 A
Note
800
1,300
3,200
DC current gain
h
FE2
V
CE
= 5.0 V, I
C
= 3.0 A
Note
500
1,000
Collector saturation voltage
V
CE(sat)
I
C
= 2.0 A, I
B
= 20 mA
Note
0.3
0.5
V
Base saturation voltage
V
BE(sat)
I
C
= 2.0 A, I
B
= 20 mA
Note
1.2
V
Gain bandwidth product
f
T
V
CE
= 5.0 V, I
C
= 0.1 A
110
MHz
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
50
pF
Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE1
CLASSIFICATION
Marking
M
L
K
h
FE1
800 to 1,600
1,000 to 2,000
1,600 to 3,200
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SD2164-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2164K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2165 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
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