- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369161 > 2SD2161 (NEC Corp.) NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2161 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管低頻功率放大器和低速開關(guān) |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | 2SD2161 |
Data Sheet D14864EJ2V0DS
3
2SD2161
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
T
T
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
°
C)
D
T
t
°
C
Pulse Width PW (s)
C
C
Without
heatsink
Single pulse
With infinite heatsink
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2161K | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2161M | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2162 | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2162M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2161-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2161K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2162 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。