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參數(shù)資料
| 型號(hào)： | 2SD2161-L |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, ISOLATED TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 130K |
| 代理商： | 2SD2161-L |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output.
This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In
addition,
a
small
resin-molded
insulation
type
package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE due to Darlington connection
hFE
≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s,
duty cycle
≤ 10%
±10
A
Base current (DC)
IB(DC)
0.5
A
TC = 25
°C
20
W
Total power dissipation
PT
TA = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Ordering Name
Package
2SD2161
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2162-K | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2162-M | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2162-K | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2163-J | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2166/Q | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2161M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2162 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR |
| 2SD2162-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Darlington Transistor,100V,8A,TO220F 制造商:Renesas 功能描述:Trans Darlington NPN 100V 8A 3-Pin(3+Tab) TO-220 |
| 2SD2162-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SD2162M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR |
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