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參數(shù)資料
| 型號(hào)： | 2SD2156O |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | 2SD2156O |
2
Power Transistors
2SD2156, 2SD2156A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=2W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
1.0
0.8
0.6
0.4
0.2
T
C=25C
I
B=1.2mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
1mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
01.2
1.0
0.8
0.2
0.6
0.4
0
5
4
3
2
1
T
C=100C
25C
–25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=40
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=12V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
10ms
t=1ms
DC
2SD2156
2SD2156A
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
0.1
1
10
100
10000
1000
Note: R
th was measured at Ta=25C and under natural convection.
(1) P
T=10V × 0.2A (2W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2156AP | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD2157Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2157P | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2161-K | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2161 | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2156P | 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
| 2SD2156Q | 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
| 2SD2157 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 60V 4A 25W BCE |
| 2SD2157A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SD2157AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 |
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