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參數(shù)資料
| 型號(hào)： | 2SD2156AQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 164K |
| 代理商： | 2SD2156AQ |
1
Power Transistors
2SD2156, 2SD2156A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
100
60
80
6
3
1
25
2
150
–55 to +150
Unit
V
A
W
C
2SD2156
2SD2156A
2SD2156
2SD2156A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
ICEO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min
60
80
500
typ
50
max
100
2500
1
Unit
A
V
MHz
2SD2156
2SD2156A
2SD2156
2SD2156A
*h
FE Rank classification
Rank
Q
P
O
hFE
500 to 1000 800 to 1500 1200 to 2500
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2156AO | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD2156O | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2156AP | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD2157Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2157P | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2156O | 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
| 2SD2156P | 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
| 2SD2156Q | 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
| 2SD2157 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 60V 4A 25W BCE |
| 2SD2157A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 |
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