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參數資料
| 型號： | 2SD2151 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type(For power switching) |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SD2151 |
1
Power Transistors
2SD2151
Silicon NPN epitaxial planar type
For power switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
80
7
20
10
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 6A
I
C
= 6A, I
B
= 0.3A
I
C
= 10A, I
B
= 1A
I
C
= 6A, I
B
= 0.3A
I
C
= 10A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 6A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 50V
min
80
45
90
30
typ
20
0.5
2.0
0.2
max
10
50
260
0.5
1.5
1.5
2.5
Unit
μ
A
μ
A
V
V
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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| 2SD2156A | SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2151P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SD2151Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SD2152 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
| 2SD2152Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
| 2SD2152R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
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