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參數(shù)資料
| 型號： | 2SD2115S |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 2SD2115S |
2SD2115(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
—
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 100 V, IE = 0
DC current transfer ratio
h
FE
150
—
V
CE = 5 V, IC = 1.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
0.8
V
I
C = 1.5 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.3
V
I
C = 1.5 A, IB = 0.05 A*
1
Fall time
t
f
—
0.6
sI
C = 1.5 A, IB1 = –IB2 = 50 mA
Note:
1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
3.0
0.3
1.0
Collector
current
I
C
(A)
0.1
0.03
110
3
30
100
Collector to emitter voltage VCE (V)
Ta = 25
°C,
1 shot pulse
iC(peak)
IC(max)
PW
=
10
ms
1
ms
Area of Safe Operation
DC
Operation(T
C =
25
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SD2116 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General Driver Applications |
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| 2SD2118 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Low VCE(sat) Transistor |
| 2SD2118_09 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low VCE(sat) transistor (strobe flash) |
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