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參數(shù)資料
| 型號(hào)： | 2SD2115 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar(Low frequency power amplifier) |
| 中文描述： | 硅瑞展（低頻功率放大器） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD2115 |
2SD2115(L)/(S)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
—
—
10
μ
A
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 1.5 A*
1
I
C
= 1.5 A, I
B
= 0.05 A*
1
DC current transfer ratio
150
—
—
Collector to emitter saturation
voltage
—
—
0.8
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.3
V
I
C
= 1.5 A, I
B
= 0.05 A*
1
Fall time
Note:
t
f
—
—
0.6
μ
s
I
C
= 1.5 A, I
B1
= –I
B2
= 50 mA
1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
3.0
0.3
1.0
C
C
0.1
0.03
1
10
3
30
100
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C,
1 shot pulse
i
C(peak)
I
C(max)
P 0m
1m
Area of Safe Operation
D paoT
C
2
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2115L | Silicon NPN Epitaxial Planar(Low frequency power amplifier) |
| 2SD2115S | Silicon NPN Epitaxial Planar(Low frequency power amplifier) |
| 2SD2115 | Power Bipolar Transistors |
| 2SD2116 | General Driver Applications |
| 2SD2117 | General Driver Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2115(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-251AA |
| 2SD2115(L)-(1) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
| 2SD2115(L)/(S) | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial Planar(Low frequency power amplifier) |
| 2SD2115(S) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252AA |
| 2SD2115(S)-(1) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
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