- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33435 > 2SD2112 6 A, 120 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD2112 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 34K |
| 代理商： | 2SD2112 |
2SD2112
3
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
20
10
5
2
0.2
0.5
1.0
Collector
current
I
C
(A)
0.1
0.05
0.02
330
10
100
300
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 shot pulse
1
s
PW
=
10
ms
1
ms
100
s
Area of Safe Operation
DC
Operation
(T
C =
25
°C)
iC(peak)
IC(max)
TC = 25°C
IB = 0
10
8
6
4
2
01
Collector
current
I
C
(A)
2
Collector to emitter voltage VCE (V)
35
4
Typical Output Characteristics
0.5 mA
1.0
3.0
1.5
2.5
2.0
30,000
10,000
300
3,000
1,000
100
30
0.1
0.3
DC
current
transfer
ratio
h
FE
1.0
Collector current IC (A)
310
T C
= 75
°C
–25
°C
25°
C
VCE = 3 V
DC Current Transfer Ratio
vs. Collector Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2114KT146/V | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2144STP/V | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2115(L) | POWER TRANSISTOR |
| 2SD2115S | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2117 | 1500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2113 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2114 | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD2114_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD2114K | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114K_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain Medium Power Transistor (20V, 0.5A) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。