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參數(shù)資料
| 型號： | 2SD2107B |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 2SD2107B |
2SD2107
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
70
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
V
I
C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 60 V, IE = 0
I
CEO
—
10
V
CE = 50 V, RBE = ∞
DC current transfer ratio
h
FE1*
2
60
—
200
V
CE = 4 V, IC = 1 A*
1
h
FE2
35
—
V
CE = 4 V, IC = 0.1 A*
1
Base to emitter voltage
V
BE
—
1.0
V
CE = 4 V, IC = 1 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 2 A, IB = 0.2 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.2
V
I
C = 2 A, IB = 0.2 A*
1
Notes: 1. Pulse test.
2. The 2SD2107 is grouped by h
FE1 as follows.
BC
60 to 120
100 to 200
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
TC = 25°C
P
C
=
25
W
10 mA
20
30
60
50
40
5
4
3
2
1
0
Collector
current
I
C
(A)
26
8
10
Collector to emitter voltage VCE (V)
4
Typical Output Characteristics
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| 2SD2107 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2107C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FN |
| 2SD2108 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
| 2SD2109 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD211 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD2110 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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