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參數(shù)資料
| 型號： | 2SD2101 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | 2SD2101 |
2SD2101
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
200
V
Collector to emitter voltage
V
CEO
200
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
10
A
Collector peak current
I
C(peak)
15
A
Collector power dissipation
P
C
2W
P
C*
1
30
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
200
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
200
—
V
I
C = 25 mA, RBE = ∞
Collector to emitter sustain
voltage
V
CEO(SUS)
170
—
V
I
C = 5 A, L = 5 mH
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 180 V, IE = 0
I
CEO
—
50
V
CE = 180 V, RBE = ∞
DC current transfer ratio
h
FE
1500
—
V
CE = 3 V, IC = 5 A*
1
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 5 A, IB = 10 mA*
1
voltage
V
CE(sat)2
—
3.0
I
C = 10 A, IB = 100 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2.0
V
I
C = 5 A, IB = 10 mA*
1
voltage
V
BE(sat)2
—
3.5
I
C = 10 A, IB = 100 mA*
1
Note:
1. Pulse test.
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| 2SD2102 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER |
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