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參數資料
| 型號： | 2SD2089 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Silicon NPN Power Transistors |
| 中文描述： | 硅NPN電源晶體管 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 48K |
| 代理商： | 2SD2089 |
Product Specification www.jmnic.com
JM
n
ic
Silicon NPN Power Transistors
2SD2089
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
EBO
Emitter-base breakdown voltage
I
E
=200mA , I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2.2A; I
B
=0.7A
0.3
1.0
V
V
BEsat
Emitter-base saturation voltage
I
C
=2.2A; I
B
=0.7A
0.85
1.0
V
I
CBO
Collector cut-off current
V
CB
=500V; I
E
=0
10
A
h
FE
DC current gain
I
C
=0.5A ; V
CE
=5V
9
18
f
T
Transition frequency
I
C
=0.1A ; V
CE
=10V
3
MHz
C
OB
Collector output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
95
pF
V
F
Diode forward voltage
I
F
=2.2A
1.2
1.5
V
t
f
Fall time
I
CP
=2.2A ;I
B1
(end)
=0.7A
0.2
0.5
s
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