參數(shù)資料
型號(hào)： 2SD2079
元件分類： 功率晶體管
英文描述： 5 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝： LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 145K
代理商： 2SD2079
2SC5195
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
100
nA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
100
nA
DC Current Gain
hFE
VCE = 1 V, IC = 3 mANote 1
80
160
Insertion Power Gain
|S21e|2
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
3
4
dB
Insertion Power Gain (1)
|S21e|2
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
8
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (1)
NF
VCE = 3 V, IC = 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
4.5
5
GHz
Gain Bandwidth Product (1)
fT
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
9.5
GHz
Collector Capacitance
Cre
VCB = 1 V, IE = 0, f = 1.0 MHzNote 2
0.7
0.8
pF
Notes 1. Pulse Measurement: PW
≤ 350
s, Duty cycle ≤ 2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE Classification
Rank
FB
Marking
88
hFE
80 to 160
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