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參數(shù)資料
| 型號(hào)： | 2SD2066 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 2SD2066 |
1
Power Transistors
2SD2066
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1373
s Features
q
High breakdown voltage: VCEO = 160V (min.)
q
Extremely satisfactory linearity of the forward current transfer
ratio hFE
q
High transition frequency fT
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
160
5
20
12
120
2.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 160V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
IC = 8A, IB = 0.8A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
210
max
50
200
1.8
2.0
Unit
A
V
MHz
pF
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
TC=25°C
Ta=25
°C
Unit: mm
4.5
±0.2
15.0
±0.5
13.0
±0.5
20.0
±0.3
19.0
±0.3
15.0
±0.2
Solder
Dip
4.0
±0.1
4.0
±0.1
12.5
3.5
16.2
±0.5
10.5
±0.5
10.9
±0.5
5.45
±0.3
1.1
±0.1
φ3.2±0.1
2.0
±0.2
2.0
±0.1
1.4
±0.3
0.6
±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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PDF描述 |
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| 2SD2066P | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2066P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD2066Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD2066S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD2067 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 2SD2067(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:2SD2067 (Tentative) - Silicon NPN epitaxial planer type |
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