參數(shù)資料
型號: 2SD2057
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type For horizontal deflection output
中文描述: 7 A, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 2/2頁
文件大?。?/td> 60K
代理商: 2SD2057
2
Power Transistors
2SD2057
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
120
100
80
60
40
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=25C
I
B
=1.6A
1.4A
1.2A
1A
0.6A
0.4A
0.2A
0.8A
Collector to emitter voltage V
CE
(V)
C
C
0.1
0.3
1
3
10
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=2
T
C
=–25C
25C
100C
Collector current I
C
(A)
C
C
0.1
0.3
1
3
10
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=2
T
C
=100C
25C
–25C
Collector current I
C
(A)
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
25C
–25C
T
C
=100C
F
F
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
30
10
10ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
50ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
C
C
0
2000
1600
400
1200
800
0
24
20
16
12
8
4
<1mA
I
CP
f=15.75kHz, T
=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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