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參數(shù)資料
| 型號： | 2SD2053S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 9 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 170K |
| 代理商： | 2SD2053S |
1
Power Transistors
2SD2053
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1362
s Features
q
High breakdown voltage: VCEO = 150V
q
Satisfactory linearity of foward current transfer ratio hFE
q
Wide area of safe operation (ASO)
q
High transition frequency fT
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
5
15
9
100
2.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 150V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 0.7A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
150
max
50
200
1.8
2.0
Unit
A
V
MHz
pF
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
TC=25°C
Ta=25
°C
Unit: mm
4.5
±0.2
15.0
±0.5
13.0
±0.5
20.0
±0.3
19.0
±0.3
15.0
±0.2
Solder
Dip
4.0
±0.1
4.0
±0.1
12.5
3.5
16.2
±0.5
10.5
±0.5
10.9
±0.5
5.45
±0.3
1.1
±0.1
φ3.2±0.1
2.0
±0.2
2.0
±0.1
1.4
±0.3
0.6
±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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