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參數(shù)資料
| 型號(hào)： | 2SD1910 |
| 廠(chǎng)商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | Silicon Diffused Power Transistor(GENERAL DESCRIPTION) |
| 中文描述： | 擴(kuò)散硅功率晶體管（一般）的說(shuō)明 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 100K |
| 代理商： | 2SD1910 |
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP
-
-
-
-
-
-
MAX
1500
600
3
6
40
5
-
2.0
1.0
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 3.0A; I
B
= 0.8A
f = 16KHz
I
F
= 3.0A
I
Csat
= 3.0A; f = 16KHz
25
1.6
s
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
-
-65
-
MAX
1500
600
3
6
UNIT
V
V
A
A
A
A
W
Tmb
25
40
150
150
SYMBOL
I
CE
I
CES
PARAMETER
Collector cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 3.0A; I
B
= 0.8A
I
C
= 3.0A; I
B
= 0.8A
I
C
= 300mA; V
CE
= 5V
I
F
= 3.0A
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=3A,I
B(end)
=0.8A,V
CC
=105V
I
C
=3A,I
B(end)
=0.8A,V
CC
=105V
TYP
-
-
MAX
1.0
2.5
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
-
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
-
-
8
5
V
V
1.5
1.6
3
90
2.0
-
-
-
1.0
V
MHz
pF
s
s
0.7
ELECTRICAL CHARACTERISTICS
TO-3PFM
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SD1910
Silicon Diffused Power Transistor
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1911 | Silicon Diffused Power Transistor(GENERAL DESCRIPTION) |
| 2SD1922 | Silicon NPN Epitaxial |
| 2SD1939 | NPN SILICON DARLINGTON TRANSISTOR |
| 2SD1940 | High-Voltage Switching, AF25 to 30W Output Applications |
| 2SD1950 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1911 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-3P-FM 1500V 5A 50W BCE |
| 2SD1912 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-220AB 60V 3A 30W BCE |
| 2SD1913 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1913S | 制造商:SANYO 功能描述:NPN 60V 0.5A 140 to 280 TO220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 60V 3A TO-220ML |
| 2SD1915 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR OR 2SD1915 |
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