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參數(shù)資料
| 型號： | 2SD1861TV2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 72K |
| 代理商： | 2SD1861TV2 |
2SD1759 / 2SD1861
Transistors
Rev.A
1/2
Power transistor (40V, 2A)
2SD1759 / 2SD1861
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
Equivalent circuit
RBE
4k
C
B
E
: Collector
: Base
: Emitter
C
B
E
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
40
5
2
1
150
55 to +150
Unit
V
V(RBE
=10k)
V
A(DC)
W
1
W(TC
=25°C)
10
2SD1861
2SD1759
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1759
ROHM : CPT3
EIAJ : SC-63
2SD1861
ROHM : ATV
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
Cob
40
5
1000
0.8
11
1
1.5
20000
V
A
V
pF
IC
=50A
IC
=1mA , RBE=10k
IE
=50A
VCB
=24V
VEB
=4V
IC/IB
=0.6A/1.2mA
VCE/IC
=3V/0.5A
hFE
2SD1759
2SD1861
1000
VCB
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
fT
150
MHz
VCE
=6V , IE= 0.1A , f=100MHz
Transition frequency
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance
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| 2SD1862TV2P | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 32V 2A 3PIN ATV RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1862TV2Q | 功能描述:兩極晶體管 - BJT DRIVER NPN 32V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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