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參數(shù)資料
| 型號(hào)： | 2SD1815TP-FA |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 2SD1815TP-FA |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:EN2539B
2SB1215/2SD1815
92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5
Package Dimensions
unit:mm
2045B
[2SB1215/2SD1815]
Applications
Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
Low collector-to-emitter saturation voltage.
Excllent linearity of hFE.
Small-sized package permitting 2SB1215/2SD1815-
applied sets to be made small and slim.
High fT.
Fast switching time.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1215/2SD1815]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1215STP-FA | 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1215QTP | 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1215TP | 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1818-K | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1818 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1815T-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 3A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1815T-TL-H | 功能描述:兩極晶體管 - BJT BIP NPN 3A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1816S-E | 功能描述:兩極晶體管 - BJT BIP NPN 4A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1816S-H | 功能描述:兩極晶體管 - BJT BIP NPN 4A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1816S-TL-E | 功能描述:兩極晶體管 - BJT HF LOW-NOISE AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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