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參數(shù)資料
| 型號： | 2SD1760TL/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2SD1760TL/R |
2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!
Structure
Epitaxial planar type
NPN silicon transistor
!
External dimensions (Units : mm)
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
1.0
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
2SD1760
2SD1864
0.1
+0.2
0.1
+0.2
+
0.3
0.1
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
5V
IC
3
A (DC)
4.5
A (Pulse)
1
Tj
150
°C
Tstg
55~+150
°C
2SD1864
2SD1760
1
15
W (Tc
=25°C)
2
PC
1 Single pulse, PW=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1760TLQ | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1864TV2P | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1762D | 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
| 2SD1762/E | 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
| 2SD1762F | 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1762 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1762DE | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1762DEF | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB: KTC2026 |
| 2SD1762E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1762EF | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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