- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33430 > 2SD1707P (PANASONIC CORP) 20 A, 80 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD1707P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3F-A1, SC-92, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 250K |
| 代理商： | 2SD1707P |
Power Transistors
1
Publication date: September 2003
SJD00211BED
2SD1707
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1156
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder
Dip
(3.5)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
130
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
Collector current
IC
20
A
Peak collector current
ICP
30
A
Collector power dissipation
PC
100
W
Ta = 25°C
3.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 080
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 010
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 050
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE = 2 V, IC = 3 A
90
260
hFE3
VCE
= 2 V, I
C
= 10 A
30
Collector-emitter saturation voltage
VCE(sat)1
IC = 8 A, IB = 0.4 A
0.5
V
VCE(sat)2
IC = 20 A, IB = 2 A
1.5
Base-emitter saturation voltage
VBE(sat)1
IC
= 8 A, I
B
= 0.4 A
1.5
V
VBE(sat)2
IC = 20 A, IB = 2 A
2.5
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 8 A, IB1 = 0.8 A, IB2 = 0.8 A
0.5
s
Storage time
tstg
VCC = 50 V
2.0
s
Fall time
tf
0.2
s
Rank
Q
P
hFE2
90 to 180
130 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1726 | 7 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1740 | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1742AQ | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1742AP | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1743AQ | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1717 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. TOP-3L 160V 12A 120W BCE |
| 2SD1718 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. TOP-3L 170V 15A 150W BCE |
| 2SD1724 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126LP 120V 3A 20W ECB |
| 2SD1725 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-1 120V 4A 20W ECB |
| 2SD1725S | 制造商:SANYO 功能描述:NPN 100V 0.5A 140 to 280 TO126LP Bulk 制造商:Sanyo 功能描述:Trans GP BJT NPN 100V 4A 3-Pin TO-126LP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。