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參數資料
| 型號： | 2SD1695 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達林頓接線）低頻功率放大器和低速開關 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SD1695 |
2SD1695
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to base voltage
V
CBO
I
C
= 1.0 mA, I
E
= 0
27
31
35
V
Collector to emitter voltage
V
CEO
I
C
= 10 mA, R
BE
=
∞
27
31
35
V
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 0.5 A
1,000
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 1.0 A
2,000
30,000
Collector saturation voltage
V
CE(sat)
*
I
C
= 1.0 A, I
B
= 1.0 mA
0.9
1.2
V
Base saturation voltage
V
BE(sat)
*
I
C
= 1.0 A, I
B
= 1.0 mA
1.6
2.0
V
Turn-on time
t
on
0.5
μ
s
Storage time
t
stg
3.0
μ
s
Fall time
t
f
I
C
= 1.0 A, I
B1
=
I
B2
= 5.0 mA
R
L
= 20
, V
CC
20 V
1.0
μ
s
≤
μ
≤
Marking
M
L
K
h
FE2
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000
°
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