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| 型號： | 2SD1664L-R-AB3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SD1664L-R-AB3-R |
2SD1664
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R208-025.C
TYPICAL CHARACTERISTICS(Cont.)
0.1 0.2
0.5
1
2
0.05
0.01
Collector-Emitter Voltage, VCE(V)
Safe Operation Area
Collec
tor
Curr
en
t,Ic
(A
)
0.02
510
20
50
0.1
0.2
0.001
0.01
0.1
1
10
1
0.1
Time, t(s)
Transient Thermal Resistance
Tra
ns
ien
tTh
er
ma
lRe
sist
an
ce
,R
TH
(°C
/W)
100
1000
10
1000
-1
20
Emitter Current, IE (mA)
Gain Bandwidth Product vs. Emitter Current
Tr
an
si
tio
n
Fr
eq
ue
nc
y,
f
T(M
Hz)
50
-2
-5
-20
-50
-10
100
200
-100
Ta=25°C
VCE =5V
0.5
10
Collector to Base Voltage, VCB(V)
Collector Output Capacitance vs.Collector-
Base Voltage
Co
llec
tor
Out
put
Ca
pa
cit
anc
e,
C
OB
(p
F)
20
12
10
20
5
50
100
f=1MHz
Ta=25°C
IB=0A
0.5
1
2
5
PW
=1
00m
s*
P
W
=1
0m
s*
DC
Ta=25°C
*Single pulse
Ta=25°C
5
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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| 2SB1133R | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB1133Q | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1664T100P | 功能描述:兩極晶體管 - BJT NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1664T100Q | 功能描述:兩極晶體管 - BJT NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1664T100R | 功能描述:兩極晶體管 - BJT NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1666 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML60V 3A 20W BCE |
| 2SD1667 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML60V 5A 20W BCE |
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