參數(shù)資料
型號: 2SD1616A
廠商: NEC Corp.
英文描述: NPN SILICON TRANSISTORS
中文描述: NPN硅三極管
文件頁數(shù): 1/3頁
文件大小: 145K
代理商: 2SD1616A
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-008,A
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier
*Medium speed switching
1: EMITTER 2: COLLECTOR 3: BASE
TO-92
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature
Junction Temperature
Total Power Dissipation (Ta=25
°
C)
Collector to Base Voltage: D1616
Collector to Emitter Voltage: D1616
Emitter to Base Voltage
Collector Current (DC)
Collector Current (*Pulse)
Note: (*) Pulse width
10ms, Duty cycle<50%
CHARACTERISTICS
(Ta=25
°
C)
CHARACTERISTIC
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain: D1616
D1616A
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
SYMBOL
Tstg
Tj
Pc
VCBO
VALUE
-55 ~+150
150
750
60
120
50
60
6
1
2
UNIT
°
C
°
C
mW
V
D1616A
D1616A
VCEO
V
VEBO
Ic
Ic
V
A
A
SYMBOL
ICBO
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE1
TEST CONDITIONS
VCB=60V
VEB= 6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
MIN.
600
135
135
81
100
TYP.
0.15
0.9
640
MAX. UNIT
100
100
0.3
1.2
700
600
400
19
nA
nA
V
V
mV
hFE2
fT
Cob
ton
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
160
0.07
MHz
pF
us
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