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參數(shù)資料
| 型號(hào)： | 2SD1609C |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 84K |
| 代理商： | 2SD1609C |
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-008,A
NPN EPITAXIAL PLANAR
TRANSISTOR
FEATURES
* Low frequency high voltage amplifier
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Collector-Base Voltage
BVCBO
160
V
Collector-Emitter Voltage
BVCEO
160
V
Emitter-Base Voltage
BVEBO
5
V
Collector Current
Ic
100
mA
Total Power Dissipation (Ta=25°C)
Ptot
1.25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-50
150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Voltage
BVCBO
IC=10A
160
V
Collector-Emitter Voltage
BVCEO
IC=1mA
160
V
Emitter-Base Voltage
BVEBO
IE=10A
5
V
Collector Cut-off Current
ICBO
VCB=140V
10
A
DC Current Gain
hFE1
hFE2
VCE=5V, Ic=10mA
VCE=5V, Ic=1mA
60
30
320
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=30mA, IB=3mA
2
V
Base-Emitter On Voltage
VBE(on)
VCE=5V, Ic=10mA
1.5
V
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA
145
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
3.8
pF
CLASSIFICATION OF hFE1
RANK
B
C
D
RANGE
60-120
100-200
160-320
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| 2SD1609B | 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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