參數(shù)資料
型號: 2SD1604
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
中文描述: 硅npn型三重擴(kuò)散(三倍擴(kuò)散npn型晶體管)
文件頁數(shù): 2/5頁
文件大小: 37K
代理商: 2SD1604
2SD1603, 2SD1604
2
Electrical Characteristics
(Ta = 25°C)
2SD1603
2SD1604
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
I
C
= 25 mA, R
BE
=
Collector to emitter
breakdown voltage
V
(BR)CEO
60
80
V
Emitter to base
breakdown voltage
V
(BR)EBO
7
7
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
100
100
μA
V
CB
= 60 V, I
E
= 0
V
CB
= 50 V, R
BE
=
V
CE
= 3 V, I
C
= 4 A*
10
10
μA
DC current tarnsfer
ratio
1000 —
20000
1000 —
20000
1
Collector to emitter
saturation voltage
V
CE(sat)1
1.5
1.5
V
I
C
= 4 A, I
B
= 8 mA*
1
V
CE(sat)2
3.0
3.0
V
I
= 8 A, I
B
= 80
mA*
1
Base to emitter
saturation voltage
V
BE(sat)1
2.0
2.0
V
I
C
= 4 A, I
B
= 8 mA*
1
V
BE(sat)2
3.5
3.5
V
I
= 8 A, I
B
= 80
mA*
1
C to E diode forward
voltage
V
D
3.0
3.0
V
I
D
= 8 A*
1
Turn on
t
on
0.5
0.5
μs
I
C
= 4 A,
I
B1
= –I
B2
= 8 mA
Storage time
t
stg
t
f
5.0
5.0
μs
Fall time
Note:
1.0
1.0
μs
1. Pulse test.
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