參數(shù)資料
型號: 2SD1584-ZM
元件分類: 功率晶體管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
封裝: TO-252, MP-3Z, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 598K
代理商: 2SD1584-ZM
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SILICON POWER TRANSISTOR
2SD1584-Z
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D18292EJ3V0DS00 (3rd edition)
(Previous No. TC-1672A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SD1584-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
High hFE: hFE = 800 to 3200
Low VCE(sat): VCE(sat) = 0.25 V TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
3
A
Collector Current (pulse)
Note 1
IC(pulse)
5
A
Total Power Dissipation (TA = 25
°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
相關(guān)PDF資料
PDF描述
2SD1584-Z 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1584-Z-E1 Si, POWER TRANSISTOR
2SD1584-ZL 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1584-ZM-E1 Si, POWER TRANSISTOR
2SD1584-ZL-E2 Si, POWER TRANSISTOR
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