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參數(shù)資料
| 型號(hào)： | 2SD1572 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SD1572 |
2SD1572, 2SD1600
2
Electrical Characteristics
(Ta = 25°C)
2SD1572
2SD1600
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
I
C
= 25 mA, R
BE
=
∞
Collector to emitter
breakdown voltage
V
(BR)CEO
60
—
—
80
—
—
V
Emitter to base
breakdown voltage
V
(BR)EBO
7
—
—
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
—
—
100
—
—
100
μA
V
CB
= 60 V, I
E
= 0
V
CE
= 50 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 4 A*
—
—
10
—
—
10
μA
DC current tarnsfer
ratio
1000 —
20000
1000 —
20000
1
Collector to emitter
V
CE(sat)1
V
CE(sat)2
—
—
1.5
—
—
1.5
V
I
C
= 4 A, I
B
= 8 mA*
I
= 8 A, I
B
= 80
mA*
1
saturation voltage
—
—
3.0
—
—
3.0
V
1
Base to emitter
V
BE(sat)1
V
BE(sat)2
—
—
2.0
—
—
2.0
V
I
C
= 4 A, I
B
= 8 mA*
I
= 8 A, I
B
= 80
mA*
1
saturation voltage
—
—
3.5
—
—
3.5
V
1
Turn on time
t
on
t
stg
t
f
—
0.5
—
—
0.5
—
μs
I
C
= 4 A,
I
B1
= –I
B2
= 8 mA
Storage time
—
6.0
—
—
6.0
—
μs
Fall time
Note:
—
1.5
—
—
1.5
—
μs
1. Pulse test.
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