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參數(shù)資料
| 型號： | 2SD1559 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
| 中文描述： | 硅npn型三重擴散（三倍擴散npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SD1559 |
2SD1558, 2SD1599
2
Electrical Characteristics
(Ta = 25°C)
2SD1558
2SD1599
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
I
C
= 25 mA, R
BE
=
∞
Collector to emitter
breakdown voltage
V
(BR)CEO
60
—
—
80
—
—
V
Emitter to base
breakdown voltage
V
(BR)EBO
7
—
—
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
—
—
100
—
—
100
μA
V
CB
= 60 V, I
E
= 0
V
CE
= 50 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 2 A*
—
—
10
—
—
10
μA
DC current tarnsfer
ratio
1000 —
20000
1000 —
20000
1
Collector to emitter
saturation voltage
V
CE(sat)1
—
—
1.5
—
—
1.5
V
I
C
= 2 A, I
B
= 4 mA*
1
V
CE(sat)2
—
—
3.0
—
—
3.0
V
I
= 4 A, I
B
= 40
mA*
1
Base to emitter
saturation voltage
V
BE(sat)1
—
—
2.0
—
—
2.0
V
I
C
= 2 A, I
B
= 4 mA*
1
V
BE(sat)2
—
—
3.5
—
—
3.5
V
I
= 4 A, I
B
= 40
mA*
1
Turn on time
t
on
—
0.5
—
—
0.5
—
μs
I
C
= 2 A,
I
B1
= –I
B2
= 4 mA
Storage time
t
stg
t
f
—
6.0
—
—
6.0
—
μs
Fall time
Note:
—
1.0
—
—
1.0
—
μs
1. Pulse test.
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