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參數(shù)資料
| 型號： | 2SD1504 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SD1504 |
2SD1504
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
ic
(peak)
P
C
Tj
30
V
Collector to emitter voltage
15
V
Emitter to base voltage
5
V
Collector current
0.5
A
Collector peak current
1.0
A
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
—
—
10
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 1 V, I
C
= 150 mA*
2
V
CE
= 1 V, I
C
= 150 mA
I
C
= 500 mA, I
B
= 50 mA*
2
DC current transfer ratio
250
—
1200
Base to emitter voltage
—
0.65
—
V
Collector to emitter saturation
voltage
—
0.15
0.5
V
V
CE(sat)
f
T
r
on
—
0.018
—
V
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 1 V, I
C
= 50 mA
I
B
= 2 mA
Gain bandwidth product
—
300
—
MHz
On resistance
Notes: 1. The 2SD1504 is grouped by h
FE
as follows.
2. Pulse test
D
E
—
0.5
—
F
250 to 500
400 to 800
600 to 1200
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