參數(shù)資料
型號: 2SD1490
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大小: 23K
代理商: 2SD1490
2SD1490
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
70
V
Collector to emitter voltage
50
V
Emitter to base voltage
6
V
Collector current
1
A
Collector power dissipation
0.75
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
70
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
1
μ
A
μ
A
V
CB
= 80 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1 A
I
C
= 1 A, I
B
= 0.1 A
Emitter cutoff current
0.2
DC current transfer ratio
100
500
Collector to emitter saturation
voltage
0.3
V
Gain bandwidth product
f
T
Cob
80
MHz
V
CE
= 2 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SD1490 is grouped by h
FE
as follows.
B
C
20
pF
D
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SD789.
相關(guān)PDF資料
PDF描述
2SD1502 Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
2SD1504 Silicon NPN Epitaxial
2SD1513K Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1513L TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92
2SD1513U Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1491-K(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SD1492 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-651500V 1.5A 50W BCE
2SD1493 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-651500V 2.5A 50W BCE
2SD1494 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR SC 1500V 3A 50W BCE
2SD1495 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P1500V 4A 50W BCE